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Datasheet IDC08S60CE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IDC08S60CE | Schottky Diode IDC08S60CE
2nd generation thinQ!TM SiC Schottky Diode
Features: Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery www.DataSheet4U.net • High surge current capa |  Infineon Technologies | diode |
IDC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDC-2512 | High Current / Surface Mount Inductor
IDC-2512
Vishay Dale
High Current, Surface Mount Inductor
FEATURES
• High energy storage. • Low resistance. • Tape and reel packaging for automatic handling.
ELECTRICAL SPECIFICATIONS
Inductance Range: 1.0µH to 1000µH, tested at 1.0Vrms. Inductance Tolerance: 20%, tigh  Vishay Siliconix inductor | | |
| 2 | IDC-5020 | High Current / Surface Mount Inductor
IDC-5020
Vishay Dale
High Current, Surface Mount Inductor
FEATURES
• High energy storage. • Low resistance. • Tape and reel packaging for automatic handling.
ELECTRICAL SPECIFICATIONS
Inductance Range: 1.0µH to 1000µH, tested at 1.0Vrms. Inductance Tolerance: 20%, tigh Vishay Siliconix inductor | | |
| 3 | IDC-7328 | High Current / Surface Mount Inductor
IDC-7328
Vishay Dale
High Current, Surface Mount Inductor
FEATURES
• High energy storage. • Low resistance. • Tape and reel packaging for automatic handling.
ELECTRICAL SPECIFICATIONS
Inductance Range: 1.0µH to 1000µH, tested at 1.0Vrms. Inductance Tolerance: 20%, tigh Vishay Siliconix inductor | | |
| 4 | IDC04S60C | 2nd generation thinQ! SiC Schottky Diode
IDC04S60C
2nd generation thinQ!TM SiC Schottky Diode
FEATURES: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current Infineon Technologies diode | | |
| 5 | IDC04S60CE | Schottky Diode IDC04S60CE
2nd generation thinQ!TM SiC Schottky Diode
Features: Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery www.DataSheet4U.net • High surge current capa Infineon Technologies diode | | |
| 6 | IDC05S120E | Schottky Diode 1200V thinQ!
Features:
TM
IDC05S120E
SiC Schottky Diode
Applications: • • • • Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers
A
Revolutionary Semiconductor Material Silicon Carbide • Switching Behaviour Benchmark • No Reverse Rec Infineon Technologies diode | | |
| 7 | IDC05S60C | 2nd generation thinQ! SiC Schottky Diode
IDC05S60C
2nd generation thinQ!TM SiC Schottky Diode
FEATURES: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current Infineon Technologies diode | |
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