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Datasheet IKB06N60T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IKB06N60T | IGBT, Insulated Gate Bipolar Transistor TRENCHSTOP™ Series
IKB06N60T p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
Desig |  Infineon | igbt |
IKB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IKB01N120H2 | HighSpeed 2-Technology IKB01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
• Designed for:
- SMPS
- Lamp Ballast - ZVS-Converter
G E
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology for 1200V applications offers:
- loss reduction Infineon data | | |
| 2 | IKB03N120H2 | HighSpeed 2-Technology IKP03N120H2, IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - t  Infineon Technologies data | | |
| 3 | IKB06N60T | IGBT, Insulated Gate Bipolar Transistor TRENCHSTOP™ Series
IKB06N60T p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
Desig Infineon igbt | | |
| 4 | IKB10N60T | IGBT, Insulated Gate Bipolar Transistor IKB10N60T
TRENCHSTOP™ Series
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Des Infineon igbt | | |
| 5 | IKB15N60T | IGBT, Insulated Gate Bipolar Transistor IKB15N60T
TRENCHSTOP™ Series
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Des Infineon igbt | | |
| 6 | IKB20N60H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode
IKB20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKB20N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandField Infineon igbt | | |
| 7 | IKB20N60T | IGBT, Insulated Gate Bipolar Transistor IKB20N60T
TRENCHSTOP™ Series
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Des Infineon igbt | |
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