Datasheet IXBH40N140 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXBH40N140	(IXBH40N140 / IXBH40N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES	IXYS Corporation

IXBH40N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXBH40N160	(IXBH40N140 / IXBH40N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C	IXYS Corporation
IXBH40N140	(IXBH40N140 / IXBH40N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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