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Datasheet IXBH42N170 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXBH42N170 | (IXBH42N170 / IXBT42N170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 42N170 IXBT 42N170
VCES = 1700 V = 75 A IC25 VCE(sat) = 3.6 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C |
 IXYS Corporation |
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| 1 | IXBH42N170A | (IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor
Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH 42N170A IXBT 42N170A
VCES IC25 VCE(sat) tfi
= 1700 = 42 = 6.0 = 50
V A V ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C |
IXYS Corporation |
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