Datasheet IXBH9N140G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXBH9N140G	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.9 V typ. 70 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Preliminary Data	IXYS Corporation

IXBH9N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXBH9N160G	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.9 V typ. 70 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB	IXYS Corporation
IXBH9N140G	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.9 V typ. 70 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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