| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | IXBT6N170 | BIMOSFET Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = |
 IXYS |
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Recommended search results related to IXBT6N170 |
| Part No | Description ( Function) | Manufacturers | |
| 1N6170 | BIDIRECTIONAL TRANSIENT SUPPRESSORS |
 Microsemi Corporation |
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| 1N6170 | 1500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS 1500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS 1N6138 thru 1N6173 January 16, 1998 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com © 1997 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 1500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS 1N6138 thru 1N6173 |
 Semtech Corporation |
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| 1N6170 | Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin |
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| 1N6170 | Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin |
New Jersey Semiconductor |
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| 1N6170 | Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin |
New Jersey Semiconductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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