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J325 PDF Datasheet

The J325 is P-channel MOSFET ( Transistor ) - 2sj325. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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1 J325
P-Channel MOSFET ( Transistor ) - 2SJ325

NEC
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Recommended search results related to J325

Part No Description ( Function) Manufacturers PDF
2SJ325   SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC
NEC
datasheet pdf
2SJ325   MOS Field Effect Power Transistors

datasheet39.com SMD Type MOS Field Effect Power Transistors 2SJ325 Features Low on-state resistance RDS(on)=83m RDS(on)=0.15 (VGS=-10V,ID=-2A) +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 IC MOSFET TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.

Guangdong Kexin Industrial
Guangdong Kexin Industrial
datasheet pdf
GT50J325   TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications · · · The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) · High speed: tf = 0.0

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
IRHMJ3250   (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

PD-96914 RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ™ IRHMJ7250 200V, N-CHANNEL ® TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) IRHMJ4250 IRHMJ8250 600K Ra

International Rectifier
International Rectifier
datasheet pdf
SSM3J325F   Field-Effect Transistor Silicon P-Channel MOS Type

SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Applications • • 1.5-V drive Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 179 mΩ (max) (@

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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