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Datasheet JDH3D01FV Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | JDH3D01FV | Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01FV
○ For wave detection
¾ Small package
0.22±0.05 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE1 2. CATHODE2 3. CATHODE1/ANODE2 0.8±0.05
Unit: mm
1.2±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltag |
Toshiba Semiconductor |
JDH3D0 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
JDH3D01S | Diode Silicon Epitaxial Schottky Barrier Type |
Toshiba Semiconductor |
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JDH3D01FV | Diode Silicon Epitaxial Schottky Barrier Type |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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