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Datasheet JDV2S08S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | JDV2S08S | VCO for UHF Band Radio JDV2S08S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S08S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V/C4V = 3.0 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reve |  Toshiba Semiconductor | data |
JDV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | JDV2S01E | VCO for UHF band JDV2S01E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.5 Ω (typ.)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperat Toshiba Semiconductor data | | |
| 2 | JDV2S01S | TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01S
VCO for UHF band
Unit in mm • • • High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics Reverse Toshiba Semiconductor diode | | |
| 3 | JDV2S02E | VCO for UHF band JDV2S02E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S02E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.60 Ω (typ.)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage tempera Toshiba Semiconductor data | | |
| 4 | JDV2S05E | VCO
JDV2S05E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05E
VCO for UHF band
• • • Small Package High Capacitance Ratio : C1V/C4V = 1.9 (typ.) Low Series Resistance : rs = 0.30 Ω (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Toshiba Semiconductor data | | |
| 5 | JDV2S07S | VCO for UHF Band Radio JDV2S07S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S07S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V/C4V = 2.3 (typ.) Low Series Resistance : rs = 0.42 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reve Toshiba Semiconductor data | | |
| 6 | JDV2S08S | VCO for UHF Band Radio JDV2S08S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S08S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V/C4V = 3.0 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reve Toshiba Semiconductor data | | |
| 7 | JDV2S10FS | Silicon Epitaxial Planar Type VCO JDV2S10FS
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S10FS
VCO for the UHF band
• • • High capacitance ratio: C0.5V/C2.5V =2.55 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.
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Unit: mm Toshiba Semiconductor data | |
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