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JDV2S10S Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | JDV2S10S | TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S10S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S10S
VCO for UHF Band Radio
• • • High Capacitance Ratio : C0.5V/C2.5V = 2.5 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a | Toshiba Semiconductor |
Numéro de référence | fiche technique | Fabricant | |
JDV2S10T | VCO for UHF Band Radio |
Toshiba Semiconductor |
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JDV2S10S | TOSHIBA DIODE Silicon Epitaxial Planar Type |
Toshiba Semiconductor |
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JDV2S10FS | Silicon Epitaxial Planar Type VCO |
Toshiba Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
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