Datasheet JDV2S16FS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	JDV2S16FS	VCO JDV2S16FS TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S16FS VCO for the UHF band • • • High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.55 Ω (typ.) This device is suitable for use in a small-size tuner. ｶｿｰﾄﾞﾏｰｸ Unit: mm 0.	Toshiba Semiconductor

JDV2S1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
JDV2S19S	VCO JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band • • • High capacitance ratio: C1V/C4V = 1.8 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Absolute Maximum Ratings (Ta =	Toshiba
JDV2S17S	VCO JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio • • • High Capacitance Ratio : C1V/C4V = 2.1 (typ.) Low Series Resistance : rs = 0.6 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Maximum Ratings (Ta = 25°C	Toshiba
JDV2S10T	VCO for UHF Band Radio JDV2S10T TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10T VCO for UHF Band Radio · · · High capacitance ratio: C0.5 V/C2.5 V = 2.5 (typ.) Low series resistance: rs = 0.35 Ω (typ.) Useful for small size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Revers	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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