Datasheet K30T60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K30T60	IKW30N60T TRENCHSTOP™ Series IKW30N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  D	Infineon Technologies

K30 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K30A	MOSFET ( Transistor ) - 2SK30A Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: 2SK30A Gate Source Silicon N-Chinnel Junction FET Application: For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ，electronic	Xiaosheng
K30H603	IGBT IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl http:// IKW30N60H3 Highspeedswitchingseriesthi	Infineon
K30T60	IKW30N60T TRENCHSTOP™ Series IKW30N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withst	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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