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K9F1G08 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
27 | K9F1G08x0M | FLASH MEMORY
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Iol(R/B) of 1.8V is | Samsung semiconductor |
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26 | K9F1G08 | FLASH MEMORY
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Iol(R/B) of 1.8V is | Samsung semiconductor |
|
25 | K9F1G08U0M | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC cha | Samsung semiconductor |
|
24 | K9F1G08U0M-YIB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC cha | Samsung semiconductor |
|
23 | K9F1G08U0M-YCB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC cha | Samsung semiconductor |
|
22 | K9F1G08U0M-VIB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC cha | Samsung semiconductor |
|
21 | K9F1G08U0M-VCB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC cha | Samsung semiconductor |
|
20 | K9F1G08U0M-PIB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC cha | Samsung semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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