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Datasheet K9F1G08Q0M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | K9F1G08Q0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Iol(R/B) of 1.8V is changed. - min. value : 7mA --> 3mA - Typ. value : |
 Samsung semiconductor |
 |
| 4 | K9F1G08Q0M-PCB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table
Affected Products : |
Samsung semiconductor |
|
| 3 | K9F1G08Q0M-PIB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table
Affected Products : |
Samsung semiconductor |
|
| 2 | K9F1G08Q0M-YCB0 | 1Gb Gb 1.8V NAND Flash Errata ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table
Affected Products : |
Samsung semiconductor |
|
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