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Datasheet LE28F4001C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | LE28F4001C | 4M-Bit (512k 8) Flash EEPROM Preliminary Specifications
CMOS LSI
LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM
Features
CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby |
 Sanyo Semicon Device |
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| 2 | LE28F4001CTS | 4M-Bit (512k 8) Flash EEPROM Preliminary Specifications
CMOS LSI
LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM
Features
CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby |
Sanyo Semicon Device |
|
| 1 | LE28F4001CTS-12 | 4M-Bit (512k 8) Flash EEPROM Preliminary Specifications
CMOS LSI
LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM
Features
CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby |
Sanyo Semicon Device |
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