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Datasheet LET9045C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | LET9045C | RF power transistor LET9045C
www.datasheet4u.com
RF power transistor the LdmoST family
Features
■ ■ ■ ■ ■
Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz BeO free package In compliance with the 2002/95/EC european directive
M243 epoxy sealed
Description
The |  ST Microelectronics | transistor |
LET Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LET16045C | RF power transistor LET16045C
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Datasheet - production data
M243 epoxy sealed
Figure 1. Pin out
1 3
Features
• Excellent thermal stability • Common source configuration • POUT (@28 V) = 45 W with 16 dB gain @ 1600
MHz
• Be  STMicroelectronics transistor | | |
| 2 | LET19060C | RF POWER TRANSISTORS Ldmos Enhanced Technology LET19060C
RF POWER TRANSISTORS Ldmos Enhanced Technology
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 % • EDGE PERFORMANCES POUT = 30 W EFF. = 25 % • GSM PERFORMANCES POUT = 65 W EFF. = 45 % • EXCELLENT THERMAL STABILITY • BeO FRE STMicroelectronics transistor | | |
| 3 | LET20015 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package LET20015
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 2.5 W STMicroelectronics transistor | | |
| 4 | LET20030C | RF POWER TRANSISTORS Ldmos Enhanced Technology LET20030C
RF POWER TRANSISTORS Ldmos Enhanced Technology
TARGET DATA
Designed for GSM / EDGE / IS-97 applications
• IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
ORDER STMicroelectronics transistor | | |
| 5 | LET20030S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package LET20030S
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 4.5 W STMicroelectronics transistor | | |
| 6 | LET21004 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package LET21004
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 / WCDMA applications
• EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROT STMicroelectronics transistor | | |
| 7 | LET21008 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package LET21008
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 / WCDMA applications
• EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 11 dB gain @ 2170 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTE STMicroelectronics transistor | |
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