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Datasheet LET9130 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | LET9130 | RF POWER TRANSISTORS Ldmos Enhanced Technology LET9130
RF POWER TRANSISTORS Ldmos Enhanced Technology
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % • EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % • GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % • EXCELLENT THERM |
STMicroelectronics |
LET9 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
LET9150 | RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs |
ST Microelectronics |
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LET9130 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
STMicroelectronics |
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LET9085 | RF POWER TRANSISTORS Ldmos Enhanced Technology |
STMicroelectronics |
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Número de pieza | Descripción | Fabricantes | |
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