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M2035S Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | M2035S | (M2035S / M2045S) High Voltage Trench MOS Barrier Schottky Rectifier M2035S & M2045S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability | Vishay Intertechnology |
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1 | M2035S-E3 | Schottky Barrier Rectifier ( Diode ) www.vishay.com
M2035S-E3, M2045S-E3
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AB
3 2 1
12
3 CASE
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
35 V, 45 V
IFSM VF at IF = 20 A
200 A 0.55 V
TJ max.
150 °C
Package
TO-220AB | Vishay |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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