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Datasheet MBR1035 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 29 | MBR1035 | Schottky Barrier Rectifier ( Diode ) Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR1035
FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Plastic Material：UL Flammability ·Min |
 Inchange Semiconductor |
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| 28 | MBR1035 | Schottky Rectifier ( Diode ) Bulletin PD-2.317 rev. F 07/03
SCHOTTKY RECTIFIER
MBR10.. Series MBRB10.. Series
10 Amp
Major Ratings and Characteristics
Characteristics
Values
IF(AV) Rectangular waveform
10
IFRM @ TC = 135°C
20
VRRM IFSM @ tp = 5 µs sine
35/45 1060
VF @ 10 Apk, TJ = 125°C
0.57
TJ range
- 65 to 1 |
 International Rectifier |
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| 27 | MBR1035 | Schottky Barrier Rectifier ( Diode ) www.vishay.com
MBR(F,B)1035 thru MBR(F,B)1060
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AC
ITO-220AC
MBR10xx
PIN 1
PIN 2
2 1
CASE
TO-263AB K
MBRF10xx
PIN 1
PIN 2
2 1
1 MBRB10xx
PIN 1
2
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
VF TJ max.
10 A 35 V |
 Vishay |
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| 26 | MBR1035 | Schottky Barrier Rectifiers Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free whee |
 LGE |
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