Datasheet ME08N20-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ME08N20-G	N-Channel 200V (D-S) MOSFET ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimize on-state resist an	Matsuki

ME08N2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ME08N20-G	N-Channel 200V (D-S) MOSFET ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimiz	Matsuki
ME08N20	N-Channel 200V (D-S) MOSFET ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transistors ar e pr oduced using high cel l de nsity DMOS trench technology. This high density process is especi ally tailored to minimiz	Matsuki

Esta página es del resultado de búsqueda del ME08N20-G. Si pulsa el resultado de búsqueda de ME08N20-G se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap