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Datasheet MSN06B0K Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 MSN06B0K   N-Channel Enhancement Mode Power MOS FET

MSN06B0K 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Feature ● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current
 MORESEMI
MORESEMI		 datasheet MSN06B0K pdf

MSN06 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
MSN06B2K

N-Channel Enhancement Mode Power MOS FET

MSN06B2K 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID =115A RDS(ON) < 7.5mΩ @ VGS=10V (Typ6.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanch
 MORESEMI
MORESEMI		 datasheet pdf - MORESEMI
MSN0675D

N-Channel Enhancement Mode Power MOS FET

MSN0675D 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity
 MORESEMI
MORESEMI		 datasheet pdf - MORESEMI
MSN0650D

N-Channel Enhancement Mode Power MOS FET

MSN0650D 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ●
MORESEMI
MORESEMI		 datasheet pdf - MORESEMI


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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