|
|
Datasheet MW6S010 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MW6S010 | RF Power Field Effect Transistor Freescale Semiconductor Technical Data
Document Number: MW6S010 Rev. 1, 5/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and |
 Freescale Semiconductor |
 |
| 2 | MW6S010GNR1 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor Technical Data
Document Number: MW6S010N Rev. 3, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation an |
Freescale Semiconductor |
|
| 1 | MW6S010NR1 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor Technical Data
Document Number: MW6S010N Rev. 3, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation an |
Freescale Semiconductor |
|
| Esta página es del resultado de búsqueda del MW6S010. Si pulsa el resultado de búsqueda de MW6S010 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |