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NE202 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
6 | NE202 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET | NEC |
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5 | NE202XX | ULTRA LOW NOISE K BAND HETERO JUNCTION FET | NEC |
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4 | NE202XX-1.4 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET | NEC |
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3 | NE202930 | Silicon NPN Epitaxial High Frequency Transistor PreliminaryData Sheet
NE202930
Silicon NPN Epitaxial High Frequency Transistor
FEATURES
• • • • High transition frequency fT = 11 GHz TYP. Ideal for low noise and low distortion amplification Suitable for equipments of low collector voltage | Renesas |
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2 | NE20283A | ULTRA LOW NOISE K BAND HETERO JUNCTION FET | NEC |
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1 | NE20248 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET | NEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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