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NE3210S01 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
3 | NE3210S01 | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excelle | NEC |
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2 | NE3210S01-T1 | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excelle | NEC |
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1 | NE3210S01-T1B | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excelle | NEC |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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