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Datasheet NE3509M04 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | NE3509M04 | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3509M04
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-m |
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NE3509 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
NE3509M04 | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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