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NE3510M04 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | NE3510M04 | HETERO JUNCTION FIELD EFFECT TRANSISTOR DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB | CEL |
Numéro de référence | fiche technique | Fabricant | |
NE3510M04 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
CEL |
Numéro de référence | Description détaillée | Fabricant | |
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