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NGB8207ABN Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | NGB8207ABNT4G | Ignition IGBT NGB8207AN, NGB8207ABN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applicat | ON Semiconductor |
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1 | NGB8207ABN | Ignition IGBT NGB8207AN, NGB8207ABN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applicat | ON Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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