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Datasheet NGD8209N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | NGD8209N | Ignition IGBT NGD8209N Ignition IGBT 12 A, 410 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injec |
 ON Semiconductor |
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| 1 | NGD8209NT4G | Ignition IGBT NGD8209N Ignition IGBT 12 A, 410 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include motorbike ignition, Direct Fuel Injec |
ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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 Sanken |
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