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Datasheet NGTB30N60FWG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NGTB30N60FWG   IGBT

NGTB30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • Optimized for Very Low VCEsat
ON Semiconductor
ON Semiconductor		 datasheet NGTB30N60FWG pdf

NGTB30N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NGTB30N60L2WG

N-Channel IGBT

Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency ap
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB30N60IHLWG

IGBT

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The
ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB30N60FWG

IGBT

NGTB30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • Optimized
ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor


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