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Datasheet NID5003N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NID5003N | Single N-Channel DPAK
NID5003N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 20 A, Single N−Channel, DPAK
HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−re | ON Semiconductor | data |
NID Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NID5001N | Self-protected FET
NID5001N
Preferred Device
Self−protected FET with Temperature and Current Limit
HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while inco ON Semiconductor data | | |
2 | NID5003N | Single N-Channel DPAK
NID5003N
Preferred Device
Self−Protected FET with Temperature and Current Limit
42 V, 20 A, Single N−Channel, DPAK
HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−re ON Semiconductor data | | |
3 | NID5004N | Self-Protected FET
NID5004N Self−Protected FET with Temperature and Current Limit
40 V, 6.5 A, Single N−Channel, DPAK
Self–protected FETs are a series of power MOSFETs which utilize ON Semiconductor HDPlus t technology. The self–protected MOSFET incorporates protection features such as int ON Semiconductor data | | |
4 | NID6002N | Self-Protected FET
NID6002N
Preferred Device
Self−Protected FET with Temperature and Current Limit
65 V, 6.5 A, Single N−Channel, DPAK
http://onsemi.com
HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve th ON Semiconductor data | | |
5 | NID9N05CL | Power MOSFET, Transistor
NID9N05CL Power MOSFET
9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package
http://onsemi.com Benefits
• High Energy Capability for Inductive Loads • Low Switching Noise Generation
Features
VDSS (Clamped) 52 V
RDS(ON) TYP 90 mΩ
ID M ON Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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