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Datasheet NP2520R Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NP2520RTVS Auto Rectifier

Naina Semiconductor Ltd. TVS Auto Rectifier, 25A Features • • • • Low Leakage Low Forward Voltage Drop Low Cost High Surge Current Capability NP2520(R) thru NP2534(R) Mechanical Characteristics • • • • Encap: Epoxy Sealed Lead: Plated Lead, Solderable Mounting: Press Fit Weight: 6.
Naina Semiconductor
Naina Semiconductor
rectifier


NP2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NP20P04SLGMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP20P04SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP20P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP20P04SLG-E1-AY Note NP20P04SLG-E2-AY Note LEAD PLATING Pure
Renesas
Renesas
transistor
2NP20P06SLGMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP20P06SLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP20P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP20P06SLG-E1-AY Note NP20P06SLG-E2-AY Note LEAD PLATING Pure
Renesas
Renesas
transistor
3NP22N055HHEMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-st
Renesas
Renesas
transistor
4NP22N055HLEMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HLE, NP22N055ILE, NP22N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-st
Renesas
Renesas
transistor
5NP22N055IHEMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-st
Renesas
Renesas
transistor
6NP22N055ILEMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HLE, NP22N055ILE, NP22N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-st
Renesas
Renesas
transistor
7NP22N055SHEMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-st
Renesas
Renesas
transistor



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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