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NVB25P06 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | NVB25P06T4G | Power MOSFET ( Transistor ) NTB25P06, NVB25P06
Power MOSFET
−60 V, −27.5 A, P−Channel D2PAK
Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes.
Features
• AEC Q101 Qualified − NVB25P06 • T | ON Semiconductor |
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1 | NVB25P06 | Power MOSFET ( Transistor ) NTB25P06, NVB25P06
Power MOSFET
−60 V, −27.5 A, P−Channel D2PAK
Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes.
Features
• AEC Q101 Qualified − NVB25P06 • T | ON Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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