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Datasheet NVB6410AN Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NVB6410ANN-Channel Power MOSFET, Transistor

NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
ON Semiconductor
ON Semiconductor		mosfet


NVB Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NVB25P06Power MOSFET, Transistor

NTB25P06, NVB25P06 Power MOSFET −60 V, −27.5 A, P−Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features • AEC Q101 Qualified − NVB25P06 • These Devices are Pb−Free and are RoHS Compliant
ON Semiconductor
ON Semiconductor		mosfet
2NVB25P06T4GPower MOSFET, Transistor

NTB25P06, NVB25P06 Power MOSFET −60 V, −27.5 A, P−Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features • AEC Q101 Qualified − NVB25P06 • These Devices are Pb−Free and are RoHS Compliant
ON Semiconductor
ON Semiconductor		mosfet
3NVB5404NPower MOSFET, Transistor

NTB5404N, NTP5404N, NVB5404N Power MOSFET 40 V, 167 A, Single N−Channel, D2PAK & TO−220 Features • Low RDS(on) • High Current Capability • Low Gate Charge • AEC−Q101 Qualified and PPAP Capable − NVB5404N • These Devices are Pb−Free and are RoHS Compliant Applications • Electro
ON Semiconductor
ON Semiconductor		mosfet
4NVB5404NT4GPower MOSFET, Transistor

NTB5404N, NTP5404N, NVB5404N Power MOSFET 40 V, 167 A, Single N−Channel, D2PAK & TO−220 Features • Low RDS(on) • High Current Capability • Low Gate Charge • AEC−Q101 Qualified and PPAP Capable − NVB5404N • These Devices are Pb−Free and are RoHS Compliant Applications • Electro
ON Semiconductor
ON Semiconductor		mosfet
5NVB5405NPower MOSFET, Transistor

NTB5405N, NVB5405N Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK Features • Low RDS(on) • High Current Capability • Low Gate Charge • AEC−Q101 Qualified and PPAP Capable − NVB5405N • These Devices are Pb−Free and are RoHS Compliant Applications • Electronic Brake Systems �
ON Semiconductor
ON Semiconductor		mosfet
6NVB5426NPower MOSFET, Transistor

NTB5426N, NTP5426N, NVB5426N Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220 Features • Low RDS(on) • High Current Capability • Avalanche Energy Specified • AEC Q101 Qualified − NVB5426N • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supplies • Co
ON Semiconductor
ON Semiconductor		mosfet
7NVB5860NN-Channel Power MOSFET, Transistor

NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant • NVB Prefix for Automotive and Other Applications Requiring Unique Site and
ON Semiconductor
ON Semiconductor		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

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