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NVD4 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
10 | NVD4856N | Power MOSFET ( Transistor ) NTD4856N, NVD4856N
Power MOSFET
25 V, 89 A, Single N−Channel, DPAK/IPAK
Features
• Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Los | ON Semiconductor |
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9 | NVD4815N | Power MOSFET ( Transistor ) NTD4815N, NVD4815N
Power MOSFET
30 V, 35 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for | ON Semiconductor |
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8 | NVD4813NH | Power MOSFET ( Transistor ) NTD4813NH, NVD4813NH Power MOSFET
Features
30 V, 40 A, Single N−Channel, DPAK/IPAK
• • • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low R | ON Semiconductor |
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7 | NVD4810N | Power MOSFET ( Transistor ) NTD4810N, NVD4810N
Power MOSFET
30 V, 54 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qual | ON Semiconductor |
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6 | NVD4809N | Power MOSFET ( Transistor ) NTD4809N, NVD4809N
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Quali | ON Semiconductor |
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5 | NVD4808N | Power MOSFET ( Transistor ) NTD4808N, NVD4808N
Power MOSFET
30 V, 63 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for | ON Semiconductor |
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4 | NVD4806N | Power MOSFET ( Transistor ) NTD4806N, NVD4806N
Power MOSFET
30 V, 76 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qua | ON Semiconductor |
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3 | NVD4805N | Power MOSFET ( Transistor ) NTD4805N, NVD4805N
Power MOSFET
30 V, 88 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for | ON Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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