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P1610AT Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
4 | P1610ATF | N-Channel Enhancement Mode MOSFET P1610ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ @VGS = 10V
ID 34A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
V | UNIKC |
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3 | P1610ATF | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
P1610ATF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ
ID 34A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TES | NIKO-SEM |
|
2 | P1610AT | N-Channel Enhancement Mode MOSFET P1610AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ @VGS = 10V
ID 51A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS | UNIKC |
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1 | P1610AT | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P1610AT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
110V
16mΩ
ID 51A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAME | NIKO-SEM |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
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