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Datasheet P2003EV Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | P2003EV | P-Channel Enhancement Mode MOSFET P2003EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -9A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous |
 UNIKC |
 |
| 4 | P2003EV8 | P-Channel Enhancement Mode MOSFET P2003EV8
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -10A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuo |
UNIKC |
|
| 3 | P2003EVG | P-Channel Enhancement Mode MOSFET P2003EVG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -9A
SOP- 08
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source |
UNIKC |
|
| 2 | P2003EVG | P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
D
P2003EVG
SOP-8 Lead-Free
PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 20m ID -9A
G S
4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE
ABSOLUTE
MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITI |
 Niko |
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