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Datasheet P400 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | P400 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical desi |
 International Rectifier |
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| 4 | P4004ED | P-Channel Enhancement Mode MOSFET P4004ED
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
40mΩ @VGS = -10V
ID -21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20 |
 UNIKC |
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| 3 | P4004ED | P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
P-Channel Logic Level Enhancement Mode Field Effect Transistor
D
P4004ED
TO-252(DPAK) Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 40mΩ ID -21A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS D |
 NIKO-SEM |
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| 2 | P4006BV | N-Channel Enhancement Mode MOSFET P4006BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ @VGS = 10V
ID 4.3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drai |
UNIKC |
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