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Datasheet P8010BT Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P8010BTN-Channel Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P8010BT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ ID 17A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Sour
NIKO-SEM
NIKO-SEM
transistor
2P8010BTN-Channel Enhancement Mode MOSFET

P8010BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 17A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous D
UNIKC
UNIKC
mosfet
3P8010BTFN-Channel Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P8010BTF Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ ID 11A D G 1. GATE 2. DRAIN 3. SOURCE 1 23 S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SY
NIKO-SEM
NIKO-SEM
transistor
4P8010BTFN-Channel Enhancement Mode MOSFET

P8010BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 11A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous
UNIKC
UNIKC
mosfet


P80 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1P8008BDN-Channel Enhancement Mode MOSFET

P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drai
UNIKC
UNIKC
mosfet
2P8008BDAN-Channel Enhancement Mode MOSFET

P8008BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 16A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dra
UNIKC
UNIKC
mosfet
3P8008BVN-Channel Enhancement Mode MOSFET

P8008BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 3A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Conti
UNIKC
UNIKC
mosfet
4P8008BVAN-Channel Enhancement Mode MOSFET

P8008BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Dra
UNIKC
UNIKC
mosfet
5P8008HVN-Channel Enhancement Mode MOSFET

P8008HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 4A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drai
UNIKC
UNIKC
mosfet
6P8008HVADual N-Channel Enhancement Mode MOSFET

P8008HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuou
UNIKC
UNIKC
mosfet
7P800ASILICON RECTIFIER DIODES

P800A - P800K PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free SILICON RECTIFIER DIODES D6 0.360 (9.1) 0.340 (8.6) 1.00 (25.4) MIN. 0.360 (9.1) 0.340 (8.
SynSemi
SynSemi
rectifier



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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