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Datasheet P9006EDG Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | P9006EDG | P-Channel Enhancement Mode MOSFET P9006EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuou |
 UNIKC |
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| 1 | P9006EDG | P-Channel Logic Level Enhancement NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor (Preliminary)
P9006EDG
TO-252 Lead-Free
D
PRODUCT SUMMARY V(BR)DSS -60V RDS(ON) 90m ID -8A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Sourc |
 Niko-Sem |
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