|
|
PF01412 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
2 | PF01412 | MOS FET Power Amplifier Module for E-GSM Handy Phone PF01412A
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-477B (Z) 3rd Edition February 1997 Application
• For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use
Features
• • • • High gain 3stage amplifier : 0 | Hitachi Semiconductor |
|
1 | PF01412A | MOS FET Power Amplifier Module for E-GSM Handy Phone PF01412A
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-477B (Z) 3rd Edition February 1997 Application
• For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use
Features
• • • • High gain 3stage amplifier : 0 | Hitachi Semiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
|
B8524 | SAW Components |
TDK |
|
BA6343 | Stepping motor driver |
ROHM |
0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheetWiki.com | 2020 | Contactez-nous | Link | English |