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Datasheet PJC7472B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1PJC7472B60V N-Channel Enhancement Mode MOSFET

PPJC7472B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 250mA Features  RDS(ON) , VGS@10V, ID@600mA<3Ω  RDS(ON) , [email protected], ID@200mA<4Ω  Advanced Trench Process Technology  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with
Pan Jit International
Pan Jit International
mosfet


PJC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1PJC138L60V N-Channel Enhancement Mode MOSFET

PPJC138L 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 200mA Features  RDS(ON) , VGS@10V, ID@200mA<4.2Ω  RDS(ON) , [email protected], ID@100mA<5Ω  RDS(ON) , [email protected], ID@50mA<7Ω  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver,
Pan Jit International
Pan Jit International
mosfet
2PJC740320V P-Channel Enhancement Mode MOSFET

PPJC7403 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -0.7A SOT-323 Features  RDS(ON) , [email protected], [email protected]<325mΩ  RDS(ON) , [email protected], [email protected]<420mΩ  RDS(ON) , [email protected], [email protected]<600mΩ  Advanced Trench Process Technology  Specially Desi
Pan Jit International
Pan Jit International
mosfet
3PJC740420V N-Channel Enhancement Mode MOSFET

PPJC7404 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 1A SOT-323 Features  RDS(ON) , [email protected], [email protected]<150mΩ  RDS(ON) , [email protected], [email protected]<215mΩ  RDS(ON) , [email protected], [email protected]<400mΩ  Advanced Trench Process Technology  Specially Designed for
Pan Jit International
Pan Jit International
mosfet
4PJC740920V P-Channel Enhancement Mode MOSFET

PPJC7409 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -500mA Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Load switch, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive
Pan Jit International
Pan Jit International
mosfet
5PJC7410N-Channel Enhancement Mode MOSFET

PPJC7410 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 500mA Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.
Pan Jit International
Pan Jit International
mosfet
6PJC7412N-Channel Enhancement Mode MOSFET

PPJC7412 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 500mA SOT-323 Features  RDS(ON) , [email protected], ID@500mA<1.2Ω  RDS(ON) , [email protected], ID@200mA<1.6Ω  RDS(ON) , [email protected], ID@100mA<2.3Ω  RDS(ON) , [email protected], ID@10mA<2.3Ω(typ.)  Advanced Trench P
Pan Jit International
Pan Jit International
mosfet
7PJC743850V N-Channel Enhancement Mode MOSFET

PPJC7438 50V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 50 V Current 400mA SOT-323 Features  RDS(ON) , VGS@10V, ID@500mA<1.45Ω  RDS(ON) , [email protected], ID@200mA<1.95Ω  RDS(ON) , [email protected], ID@100mA<4.0Ω  RDS(ON) , [email protected], ID@10mA<4.0Ω(typ.)  Advanced Trenc
Pan Jit International
Pan Jit International
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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