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PK60 Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
6 | PK608DY | N-Channel Enhancement Mode MOSFET PK608DY
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 7mΩ @VGS =10V
30V 5.5mΩ @VGS =10V
ID Channel 50A Q1 58A Q2
PDFN 5X6P
1 : G1 2,3,4 : D1 5,6,7 : S2 8 : G2 9 : S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless O | UNIKC |
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5 | PK608BA | N-Channel Enhancement Mode MOSFET PK608BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 3.5mΩ @VGS = 10V
ID 87A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
| UNIKC |
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4 | PK601CA | N&P-Channel Enhancement Mode MOSFET PK601CA
N & P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS -30V
RDS(ON) 28mΩ @VGS = -10V
30V 22mΩ @VGS = 10V
ID CH. -22A Q2 23A Q1
PDFN 5*6P
100% UIS Tested 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise N | UNIKC |
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3 | PK600BA | N-Channel Enhancement Mode MOSFET PK600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID 40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
| UNIKC |
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2 | PK60F | Diode ( Rectifier ) | American Microsemiconductor |
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1 | PK60 | Diode ( Rectifier ) | American Microsemiconductor |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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