Datasheet PYA28C64B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	PYA28C64B	STATIC CMOS RAM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 100 µA Standby Current Fast Write Cycle Times PYA28C64B 8K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs	PYRAMID	cmos

PYA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	PYA28C010	EEPROM FEATURES Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 500 µA Standby Current Fast Write Cycle Times PYA28C010 128K x 8 EEPROM Software Data Protection Fully TTL Compatible Inputs and Outputs	PYRAMID	data
2	PYA28C16	EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs PYA28C16 2K X 8 EEPROM Enduranc	PYRAMID	data
3	PYA28C16B	EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Byte Write Cycle Time - 10 ms Maximum Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs PYA28C16B 2K X 8 EEPROM En	PYRAMID	data
4	PYA28C256	EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times PYA28C256 32K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs	PYRAMID	data
5	PYA28C64	EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time RDY/BUSY pin is not connected for the PYA28C64X PYA28C64(X) 8K X 8 EEPROM CMOS & TTL Co	PYRAMID	data
6	PYA28C64B	STATIC CMOS RAM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 100 µA Standby Current Fast Write Cycle Times PYA28C64B 8K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs	PYRAMID	cmos
7	PYA28HC256	STATIC CMOS RAM FEATURES Access Times of 70, 90 and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times PYA28HC256 HIGH SPEED 32K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Output	PYRAMID	cmos

Esta página es del resultado de búsqueda del PYA28C64B. Si pulsa el resultado de búsqueda de PYA28C64B se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap