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Datasheet R1LV0408CSP-7LI Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | R1LV0408CSP-7LI | Wide Temperature Range Version 4M SRAM (512-kword 8-bit) |  Hitachi Semiconductor | ram |
| 2 | R1LV0408CSP-7LI | Wide Temperature Range Version 4M SRAM (512-kword 8-bit) | Hitachi Semiconductor | ram |
R1L Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | R1LP0108E | 1Mb Advanced LPSRAM (128k word x 8bit) R1LP0108E Series
1Mb Advanced LPSRAM (128k word x 8bit)
R10DS0029EJ0200 Rev.2.00 2011.01.14
Description
The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E S  Renesas Technology ram | | |
| 2 | R1LP0408C | Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) R1200 THRU R2000
HIGH VOLTAGE SILICON RECTIFIER Reverse Voltage - 1200 to 2000 Volts Forward Current - 0.2 to 0.5 Ampere
Features
Low cost Low leakage Low forward voltage drop High current capability
Mechanical Data
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD-202 method Hitachi Semiconductor ram | | |
| 3 | R1LP0408C | Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) R1200 THRU R2000
HIGH VOLTAGE SILICON RECTIFIER Reverse Voltage - 1200 to 2000 Volts Forward Current - 0.2 to 0.5 Ampere
Features
Low cost Low leakage Low forward voltage drop High current capability
Mechanical Data
Case: Molded plastic Epoxy: UL94V-0 rate flame retardant Lead: MIL-STD-202 method Hitachi Semiconductor ram | | |
| 4 | R1LP0408CSB-5SC | 4M SRAM R1LP0408C-C Series
4 M SRAM (512-kword × 8-bit)
REJ03C0077-0100Z Rev. 1.00 Aug.01.2003
Description
The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology  Renesas ram | | |
| 5 | R1LP0408CSB-5SI | Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) DC COMPONENTS CO., LTD.
R
R1200F THRU R3000F
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE FAST RECOVERY RECTIFIER
VOLTAGE RANGE - 1200 to 3000 Volts CURRENT - 0.2 to 0.5 Ampere
FEATURES
*Fast switching *Low leakage *High current capability *High surge capability *High reliabili Hitachi Semiconductor ram | | |
| 6 | R1LP0408CSB-5SI | Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) DC COMPONENTS CO., LTD.
R
R1200F THRU R3000F
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE FAST RECOVERY RECTIFIER
VOLTAGE RANGE - 1200 to 3000 Volts CURRENT - 0.2 to 0.5 Ampere
FEATURES
*Fast switching *Low leakage *High current capability *High surge capability *High reliabili Hitachi Semiconductor ram | | |
| 7 | R1LP0408CSB-7LC | 4M SRAM R1LP0408C-C Series
4 M SRAM (512-kword × 8-bit)
REJ03C0077-0100Z Rev. 1.00 Aug.01.2003
Description
The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology Renesas ram | |
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