Datasheet R1RW0408D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	R1RW0408D	4M High Speed SRAM R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit	Renesas	ram
2	R1RW0408DGE-0PR	4M High Speed SRAM R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit	Renesas	ram
3	R1RW0408DGE-2LR	4M High Speed SRAM R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit	Renesas	ram
4	R1RW0408DGE-2PR	4M High Speed SRAM R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0111-0200 Rev. 2.00 Dec.1.2008 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit	Renesas	ram

R1R Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	R1RP0404D	4M High Speed SRAM R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit de	Renesas	ram
2	R1RP0404DGE-2LR	4M High Speed SRAM R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit de	Renesas	ram
3	R1RP0404DGE-2PR	4M High Speed SRAM R1RP0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0116-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit de	Renesas	ram
4	R1RP0408D	4M High Speed SRAM R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed	Renesas	ram
5	R1RP0408DGE-0PR	4M High Speed SRAM R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed	Renesas	ram
6	R1RP0408DGE-2LR	4M High Speed SRAM R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed	Renesas	ram
7	R1RP0408DGE-2PR	4M High Speed SRAM R1RP0408D Series 4M High Speed SRAM (512-kword × 8-bit) REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed	Renesas	ram

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Número de pieza	Descripción	Fabricantes	PDF
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