RB160MM-30 PDF Datasheet

Schottky Barrier Diode RB160MM-30 lApplication General rectification lDimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Data Sheet lLand Size Figure (Unit : mm) 1.2 0.85 lFeatures 1) Small power mold type (PMDU) 2) High reliability 3) Low VF 0.9±0.1 3.5±0.2 0.12 2.6±0.1 PMDU lStructure 0.8±0.1 Cathode ROHM : PMDU JEDEC : SOD-123FL : Manufacture Date lConstru

MCC Features • • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# FST16020 THRU FST160100 160 Amp Schottky Barrier Rectifier 20 to 100 Volts POWERMOD A N Metal of siliconrectifier, majonty carrier co

Transys Electronics L I M I T E D FSTI16020 THRU FSTI160100 SCHOTTKY DIODES MODULE TYPE 160A Features High Surge Capability Types Up to 100V VRRM Isolated heatsink 160Amp Rectifier 20-100 Volts POWER MOD TO-249AA A N Maximum Ratings Operating Temperature: -40 C to +125 Stor

KM48S16030 4M x 8Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Ty

KM48S16030A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM48S16030A Revision History Revision 0.0 (May 15, 1999) C

KM48S16030B CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM48S16030B Revision History Revision 0.0 (May 15, 1999) C