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RBV602D Fiches techniques |
Numéro de référence | Description détaillée | Fabricant | ||
1 | RBV602D | SILICON BRIDGE RECTIFIERS RBV600D - RBV610D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts Io : 6.0 Amperes
C3
RBV25
3.9 ± 0.2 30 ± 0.3 4.9 ± 0.2 ∅3.2 ± 0.1 20 ± 0.3
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Lo | EIC discrete Semiconductors |
Numéro de référence | fiche technique | Fabricant | |
RBV602 | SILICON BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
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RBV602 | Silicon Bridge Rectifiers |
LGE |
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RBV602 | Diode ( Rectifier ) |
American Microsemiconductor |
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RBV602S | Bridge Rectifiers |
LRC |
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RBV602S | Molding Single-Phase Bridge Rectifier |
SeCoS |
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RBV602G | 6.0A BRIDGE RECTIFIERS |
Leshan Radio Company |
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RBV602D | SILICON BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
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RBV602 | Silicon Bridge Rectifiers |
Galaxy Microelectronics |
Numéro de référence | Description détaillée | Fabricant | |
ASJD1200R085 | Normally-ON Trench Silicon Carbide Power JFET |
Micross |
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B8524 | SAW Components |
TDK |
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BA6343 | Stepping motor driver |
ROHM |
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