|
|
Datasheet RBV610 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RBV610 | Silicon Bridge Rectifiers Features
Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 200 amperes peak
RBV6005-RBV610
Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
KBJ
30± 0.3 3 .2± 0.15
4.7± 0.25 3.7± 0.2
11.1± 0.2
5.5± |  LGE | rectifier |
| 2 | RBV610 | Silicon Bridge Rectifiers Production specification
Silicon Bridge Rectifiers
FEATURES
z Ideal for printed circuit board z Reliable low cost construction utilizing molded
plastic technique results in inexpensive product z Surge overload rating: 200 amperes peak
RBV6005--RBV610
Pb
Lead-free
Maximum Ratings (@TA = 25°C unle |  Galaxy Microelectronics | rectifier |
| 3 | RBV610 | SILICON BRIDGE RECTIFIERS RBV600 - RBV610
PRV : 50 - 1000 Volts Io : 6.0 Amperes
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation
|  EIC discrete Semiconductors | rectifier |
| 4 | RBV610D | SILICON BRIDGE RECTIFIERS RBV600D - RBV610D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts Io : 6.0 Amperes
C3
RBV25
3.9 ± 0.2 30 ± 0.3 4.9 ± 0.2 ∅3.2 ± 0.1 20 ± 0.3
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High ca | EIC discrete Semiconductors | rectifier |
RBV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RBV-1004B | Bridge Diodes (Schottky Barrier) Bridge Diodes (Schottky Barrier)
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) Tj (°C) Tstg (°C) VF (V) max per element Electrical Characteristics (Ta = 25°C) IR (mA) VR = VRM
max per element
Others Rth ( j-c) IF /IRP (mA) (°C/ W) Mass Fig. (g)
50Hz With Half-cycle  Sanken electric diode | | |
| 2 | RBV-1306 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 3 | RBV-1506 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 4 | RBV-1506S | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 5 | RBV-2506 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 6 | RBV-401 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (ºC) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth (j-c) (ºC/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 7 | RBV-402 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (ºC) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth (j-c) (ºC/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | |
| Esta página es del resultado de búsqueda del RBV610. Si pulsa el resultado de búsqueda de RBV610 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |