| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RD04HMS2 | Silicon MOSFET Power Transistor < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications. 4.9+/-0.15 0.2+/-0.05 1 1.0+/-0.05 FEATURES 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14 |
 Mitsubishi Electric Semiconductor |
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| Part No | Description ( Function) | Manufacturers | |
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Sumida |
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| 0420CDMCBDS-1R5MC | SMD Power Inductor SMD Power Inductor 0420CDMCB/DS Description • Magnetically shielded. • L W H: 4.75 4.35 2.0 mm Max. • Product weight: 0.17g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. • Halogen Free available. RoHS Halogen Free Dimension - [mm] 4.5±0.25 5 2 . 0 ± 1 . |
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List of most widely used semiconductors
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| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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