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Datasheet RF1S640 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | RF1S640 | 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs IRF640, RF1S640, RF1S640SM
Data Sheet January 2002
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo |
Fairchild Semiconductor |
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1 | RF1S640SM | 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETs IRF640, RF1S640, RF1S640SM
Data Sheet January 2002
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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